The high-voltage MOSFETs offer better efficiency, thermal performance, and reliability with a smaller die and lower losses.

SemiQ’s third-generation 1200 V silicon carbide (SiC) MOSFET, the QSiC 1200 V, builds on previous designs with a 20% smaller die size, lower switching losses, and improved efficiency. Designed for electric vehicle charging, renewable energy, industrial power supplies, and motor drives, this MOSFET offers better thermal performance and easier integration into existing systems.

With lower total switching losses (1646 µJ), an extended creepage distance (9 mm), and a more optimized gate drive voltage (-4 V to +18 V), it provides strong performance in high-power applications.

 

QSiC 1200V is automotive qualified to AEC-Q101 and known-good-die tested beyond 1400 V, and it targets EV‑charging, UPS, renewable power generation, and motor‑driver applications. Adapted from image used courtesy of SemiQ

 

Smaller Die, Better Efficiency

SemiQ has reduced the die size in its third-gen MOSFET by 20% while maintaining the same on-resistance, increasing wafer yield without sacrificing performance. Meanwhile, a lower reverse recovery charge of 470 nC improves EMI performance and switching speed, contributing to greater efficiency. Compared to the previous generation, the third-gen MOSFET has a slightly higher gate charge, which leads to a minor increase in switching loss. However, this is offset by other efficiency gains.

The QSiC 1200V MOSFET is available in 16mΩ, 20mΩ, 40mΩ, and 80mΩ resistance variants in both bare die and TO-247 4L discrete packages. It supports a gate-source voltage range of -4 V to +18 V, making it compatible with industry-standard gate drivers. The gate threshold voltage is now 3.5 V-4 V, reducing the risk of accidental turn-on due to electrical noise. These refinements make integration easier for engineers working with existing SiC-based designs.

Switching performance is strong, with a turn-on delay of 21 ns, a turn-off delay of 65 ns, and a rise and fall time of 25 ns and 20 ns, respectively. The junction-to-case thermal resistance is 0.26°C/W, and the power dissipation is rated at 484 W, helping to manage heat effectively.

 

Long-Term Durability

SemiQ has implemented rigorous testing to ensure long-term durability. Known-good-die (KGD) testing beyond 1400 V, avalanche testing up to 800 mJ, and 100% wafer-level gate oxide burn-in screening all contribute to reliability. The extended creepage distance of 9 mm improves electrical insulation, particularly in high-voltage environments.

 

MOSFETs from SemiQ. Image used courtesy of SemiQ

 

With the third-generation model, SemiQ is targeting applications including EV chargers, solar inverters, industrial power supplies, and motor drives. Lower switching losses mean reduced heat generation and improved efficiency, minimizing the need for large cooling systems. The combination of fast switching speeds, lower EMI, and improved thermal performance makes it a strong choice for engineers working on high-power applications. For industrial power supplies and motor drives, the combination of fast switching speeds and high thermal performance ensures stable operation under heavy loads.

SemiQ’s third-generation 1200 V SiC MOSFET offers key improvements in efficiency, switching performance, and reliability. The smaller die size, optimized gate drive, and reduced switching losses make it a practical option for high-voltage power systems. With strong performance in EV charging, renewable energy, and industrial applications, it provides a balance of efficiency, durability, and ease of integration.